 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Product Description Stanford Microdevices' SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 1960 MHz 2140 MHz IP3 P1dB Gain SXT-289 1800-2500 MHz Power Amplifier Product Features * Patented High Reliability GaAs HBT Technology * High Output 3rd Order Intercept : +42 dBm typ. * at 2450 MHz Surface-Mountable Power Plastic Package Applications * PCS Systems * WLL, Wideband CDMA Systems * ISM Systems 2450 MHz Symbol Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V s = 8V Rbias = 27 ohms Vdevice = 5 V typ. Units dB m dB m dB m dB dB dB dB m dB m dB m dB dB dB mA C/W Min. Typ. 23.5 23.5 23.0 Max. P 1dB S 21 Small signal gain 13.5 15.0 15.0 13.8 1.4:1 1.6:1 1.6:1 16.6 S11 Input VSWR IP3 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) 37.5 41.0 40.0 42.0 4.4 4.5 5.4 NF Noise Figure Id Rth, j-l Device Current Thermal Resistance (junction - lead) 85 105 108 120 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 1 SXT-289 1800-2500 MHz Power Amplifier 1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency 26 25 dBm Gain vs. Frequency 25C -40C 85C dB 20 18 16 14 12 10 1930 25C -40C 85C 24 23 22 21 1930 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Input/Output Return Loss, Isolation vs Frequency 0 -5 -10 -15 -20 -25 -30 -35 -40 1930 42 S11 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 41 40 39 38 37 1930 25C -40C 85C dB S22 S12 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 .0 25C -40C 85C 42 Device Current (mA) 41 dBm 40 39 38 37 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) 25C -40C 85C 2 .0 4 .0 VS (V) 6.0 8 .0 10 .0 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 2 SXT-289 1800-2500 MHz Power Amplifier 2140 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 26 25 dBm 20 18 16 dB 25C -40C 85C 24 23 22 21 2110 25C -40C 85C 14 12 10 2110 2120 2130 2140 MHz 2150 2160 2170 2120 2130 2140 MHz 2150 2160 2170 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 -30 -35 2110 45 43 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 25C -40C 85C dB S11 S22 S12 41 39 37 35 2110 2120 2130 2140 MHz 2150 2160 2170 2120 2130 2140 MHz 2150 2160 2170 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 .0 25C -40C 85C 45 43 dBm 41 39 37 35 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) Device Current (mA) 25C -40C 85C 2 .0 4 .0 VS (V) 6 .0 8 .0 1 0 .0 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 3 SXT-289 1800-2500 MHz Power Amplifier 2450 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 26 25 24 dBm 20 18 16 dB 25C -40C 85C 23 22 21 20 2400 25C -40C 85C 14 12 10 2400 2420 2440 MHz 2460 2480 2500 2420 2440 2460 MHz 2480 2500 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 S12 -30 -35 2400 2420 dB 46 44 S22 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) S11 42 40 38 25C -40C 85C 2440 MHz 2460 2480 2500 36 2400 2420 2440 MHz 2460 2480 2500 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 .0 25C -40C 85C 46 44 dBm 42 40 38 36 0 2 4 6 8 10 12 14 16 POUT per tone (dBm) 25C -40C 85C Device Current (mA) 2 .0 4 .0 VS (V) 6 .0 8 .0 1 0 .0 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 4 1960 MHz Application Circuit Note: Circuit tuned for Output IP3 SXT-289 1800-2500 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Rbias 0.1 F (SIZE A) 390 Rbias (Ohms) Power Rating 18pF Rbias 1000pF 180 15 nH 15 nH Z=50 , 8.8 390 Ohms 180 Ohms RFin 0.1uF 1000pF 18pF RFout 2.7 nH 39pF 39pF 15nH 2.7nH 15nH 1.0pF 39pF 39pF 0.5pF 0.5 pF SXT-289 Z=50 , 19 SXT-289 1.0 pF STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A Z=50 , 13.5 1960 MHz Schematic 1960 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Frequency Vs = 5V 1960 MHz 15.3 39.7* 23.8 Small Signal Gain (dB) Output IP3 (dBm) 0.1 F (SIZE A) 22 pF P1dB (dBm) 220 2 6 1 (Rohm) UMZ1N 1000 pF 4 5 3 4.3 *Note: IP3 performance degraded due to lower (4.5V) device voltage. 0.1 uF 22pF 4.3 15 nH 39pF Z=50 , 35.5 39pF 220 1.8K 750 39pF 0.5 pF 1000pF 1.8K 15nH UMZ1N 1 750 39pF 0.5p F 1.0p F SXT-289 1.0 pF Z=50 , 13.5 1960 MHz Schematic STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 1960 MHz Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 5 2140 MHz Application Circuit Note: Circuit tuned for Output IP3 SXT-289 1800-2500 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Supply Voltage(Vs) Rbias (Ohms) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Vs Rbias 0.1 F (SIZE A) 390 Power Rating 18pF Rbias 390 Ohms 180 Ohms 1000pF 180 15 nH 15 nH 39pF Z=50 , 56.7 RFin 0.1uF 1000pF 18pF RFout 39pF 15nH 15nH 39pF 39pF SXT-289 SXT-289 1.0pF 1.0 pF STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 2140 MHz Schematic 2140 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Frequency Vs = 5V 2140 MHz 15.0 39.2* 23.0 Small Signal Gain (dB) Output IP3 (dBm) 0.1 F (SIZE A) 22 pF P1dB (dBm) 220 2 6 1 (Rohm) UMZ1N 1000 pF 4 5 3 4.3 *Note: IP3 performance degraded due to lower (4.5V) device voltage. 0.1 uF 22pF 4.3 15 nH 39pF Z=50 , 49.8 39pF 750 220 1.8K 750 39pF 1000pF 1.8K 15nH UMZ1N 1 39pF 1.0p F SXT-289 1.0 pF 2140 MHz Schematic NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 2140 MHz Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 6 2450 MHz Application Circuit Note: Circuit tuned for Output IP3 SXT-289 1800-2500 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Rbias 0.1 F (SIZE A) 390 Rbias (Ohms) Power Rating 18pF RbiaS 1000pF 180 15 nH 15 nH 39pF Z=50 , 56 390 Ohms 180 Ohms RFin 0.1uF 1000pF 18pF RFout 39pF 15nH 15nH 39pF 39pF SXT-289 1.0pF SXT-289 1.0 pF STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 2450 MHz Schematic 2450 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Frequency Vs = 5V 2450 MHz 14.6 39.7* 23.7 Small Signal Gain (dB) Output IP3 (dBm) 0.1 F (SIZE A) 22 pF P1dB (dBm) *Note: IP3 performance degraded due to lower (4.5V) device voltage. 220 2 6 1 (Rohm) UMZ1N 1000 pF 4 5 3 4.3 0.1 uF 22pF 4.3 15 nH 39pF Z=50 , 40.9 39pF 750 220 1000pF 1.8K 750 39pF 1.8K UMZ1N 15nH 1 39pF 1.0p F SXT-289 1.0 pF STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 2450 MHz Schematic NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 2450 MHz Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 7 Absolute Maximum Ratings Parameter Device Voltage Device Current Power Dissipation RF Input Power Junction Temperature Operating Temperature Storage Temperature SXT-289 1800-2500 MHz Power Amplifier Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SXT-289 1000 7" Absolute Maximum 6V 200mA 1500mW 100mW +150C -40C to +85C -65C to +150C Pin # 1 2 3 4 Part Symbolization The part will be symbolized with a "XA2" designator on the top surface of the package. Pin Description Function Base GND & Emitter Collector Base Pin Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. GND & Emitter Same as Pin 2 Package Dimensions .161.006 .096.006 .041.006 .008 .059.004 .038.002 .036.002 .048.002 .010.002 TYP(2X) .016REF .118REF .177.004 .118.003 .059.003 .019 +.003 -.002 .059 .010 .068.004 .034 .016 +.003 -.002 .030.004 .105.002 MARKING AREA TOP VIEW DOT DENOTES PIN 1 +3 5 -4 .041REF .117.002 .024.004 .161 REF +.002 .015 -.001 TYP(4X) PCB Pad Layout Recommended via and mounting hole pattern (For RF Ground and Thermal considerations) DIMENSIONS ARE IN INCHES [MM] Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101157 Rev D 8 |
Price & Availability of SXT-289
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |